APTM100A13SG APTM100A13SG C rev 5 october, 2013 www.microsemi.com 1 C 7 out s1g2 s2 g1 q2 0/vbus vbus q1 all ratings @ t j = 25c unless otherwise specified absolute maximum ratings these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdown voltage 1000 v i d continuous drain current t c = 25c 65 a t c = 80c 49 i dm pulsed drain current 240 v gs gate - source voltage 30 v r dson drain - source on resistance 156 m p d maximum power dissipation t c = 25c 1250 w i ar avalanche current (repetitive and non repetitive) 24 a e ar repetitive avalanche energy 30 mj e as single pulse avalanche energy 1300 v dss = 1000v r dson = 130m typ @ tj = 25c i d = 65a @ tc = 25c application ? motor control ? switched mode power supplies ? uninterruptible power supplies features ? power mos 7 ? mosfets - low r dson - low input and miller capacitance - low gate charge - fast intrinsic reverse diode - avalanche energy rated - very rugged ? kelvin source for easy drive ? very low stray inductance - symmetrical design - m5 power connectors ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? low profile ? rohs compliant phase leg series & parallel diodes mosfet power module downloaded from: http:///
APTM100A13SG APTM100A13SG C rev 5 october, 2013 www.microsemi.com 2 C 7 electrical characteristics symbol characteristic test conditions min typ max unit i dss zero gate voltage drain current v gs = 0v,v ds = 1000v t j = 25c 600 a v gs = 0v,v ds = 800v t j = 125c 2 ma r ds(on) drain C source on resistance v gs = 10v, i d = 32.5a 130 156 m v gs ( th ) gate threshold voltage v gs = v ds , i d = 6ma 3 5 v i gss gate C source leakage current v gs = 30 v, v ds = 0v 450 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance v gs = 0v v ds = 25v f = 1mhz 15.2 nf c oss output capacitance 2.6 c rss reverse transfer capacitance 0.42 q g total gate charge v gs = 10v v bus = 500v i d = 65a 562 nc q gs gate C source charge 75 q gd gate C drain charge 363 t d(on) turn-on delay time inductive switching @ 125c v gs = 15v v bus = 667v i d = 65a r g = 0.5 ? 9 ns t r rise time 9 t d ( off ) turn-off delay time 50 t f fall time 24 e on turn-on switching energy inductive switching @ 25c v gs = 15v, v bus = 667v i d = 65a, r g = 0.5 ? 2.13 mj e off turn-off switching energy 0.46 e on turn-on switching energy inductive switching @ 125c v gs = 15v, v bus = 667v i d = 65a, r g = 0.5 ? 4.4 mj e off turn-off switching energy 0.57 r thjc junction to case thermal resistance 0.1 c/w series diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum repetitive reverse voltage 1000 v i rm maximum reverse leakage current v r =1000v 350 a i f dc forward current t c = 100c 120 a v f diode forward voltage i f = 120a 1.9 2.5 v i f = 240a 2.2 i f = 120a t j = 125c 1.7 t rr reverse recovery time i f = 120a v r = 667v di/dt = 400a/s t j = 25c 280 ns t j = 125c 350 q rr reverse recovery charge t j = 25c 1520 nc t j = 125c 7200 r thjc junction to case thermal resistance 0.46 c/w downloaded from: http:///
APTM100A13SG APTM100A13SG C rev 5 october, 2013 www.microsemi.com 3 C 7 parallel diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum repetitive reverse voltage 1000 v i rm maximum reverse leakage current v r =1000v 350 a i f dc forward current t c = 100c 120 a v f diode forward voltage i f = 120a 1.9 2.5 v i f = 240a 2.2 i f = 120a t j = 125c 1.7 t rr reverse recovery time i f = 120a v r = 667v di/dt = 400a/s t j = 25c 280 ns t j = 125c 350 q rr reverse recovery charge t j = 25c 1520 nc t j = 125c 7200 r thjc junction to case thermal resistance 0.46 c/w thermal and package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150 c t stg storage temperature range -40 125 t c operating case temperature -40 100 torque mounting torque to heatsin k m6 3 5 n.m for terminals m5 2 3.5 wt package weight 300 g sp6 package outline (dimensions in mm) see application note apt0601 - mounting instructions for sp6 power modules on www.microsemi.com downloaded from: http:///
APTM100A13SG APTM100A13SG C rev 5 october, 2013 www.microsemi.com 4 C 7 typical performance curve 0.9 0.7 0.5 0.3 0.1 0.05 sin g le pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration (seconds) maximum effective transient thermal impedance, junction to case vs pulse durati on 5v 5.5v 6v 6.5v 7v 0 30 60 90 120 150 180 0 4 8 1216202428 i d , drain current (a) v ds , drain to source voltage (v) v gs =15&10v low voltage output characteristics t j =25c t j =125c 0 60 120 180 240 300 360 012345678910 i d , drain current (a) v gs , gate to source voltage (v) transfert characteristics v ds > i d (on)xr ds (on)max 250 s pulse test @ < 0.5 duty cycle v gs =10v v gs =20v 0.8 0.9 1 1.1 1.2 1.3 1.4 0 30 60 90 120 150 180 i d , drain current (a) r ds(on) vs drain current r ds (on) drain to source on resistance normalized to v gs =10v @ 32.5a 0 10 20 30 40 50 60 70 25 50 75 100 125 150 i d , dc drain current (a) t c , case temperature (c) dc drain current vs case temperature downloaded from: http:///
APTM100A13SG APTM100A13SG C rev 5 october, 2013 www.microsemi.com 5 C 7 1.00 1.05 1.10 1.15 25 50 75 100 125 150 t j , junction temperature (c) bv dss , drain to source breakdown voltag e (normalized) breakdown voltage vs temperature 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 150 t j , junction temperature (c) on resistance vs temperature r ds (on), drain to source on resistance (normalized) v gs =10v i d =32.5a 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 25 50 75 100 125 150 t c , case temperature (c) threshold voltage vs temperature v gs (th), threshold voltage (normalized) 10ms 1ms 100s 1 10 100 1000 1 10 100 1000 i d , drain current (a) v ds , drain to source voltage (v) maximum safe operating area limited by r ds on single pulse t j =150c t c =25c ciss crss coss 100 1000 10000 100000 0 1 02 03 04 05 0 c, capacitance (pf) v ds , drain to source voltage (v) capacitance vs drain to source voltage v ds =200v v ds =500v v ds =800v 0 2 4 6 8 10 12 14 0 120 240 360 480 600 720 840 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =65a t j =25c downloaded from: http:///
APTM100A13SG APTM100A13SG C rev 5 october, 2013 www.microsemi.com 6 C 7 delay times vs current t d(on) t d(off) 0 10 20 30 40 50 60 20 30 40 50 60 70 80 90 100 i d , drain current (a) t d(on) and t d(off) (ns) v ds =667v r g =0.5 ? t j =125c l=100h rise and fall times vs current t r t f 0 10 20 30 40 50 20 30 40 50 60 70 80 90 100 i d , drain current (a) t r and t f (ns) v ds =667v r g =0.5 ? t j =125c l=100h switching energy vs current e on e off 0 1 2 3 4 5 6 7 8 20 30 40 50 60 70 80 90 100 i d , drain current (a) switching energy (mj) v ds =667v r g =0.5 ? t j =125c l=100h e on e off 0 1 2 3 4 5 6 012345 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =667v i d =65a t j =125c l=100h hard switching zcs zvs 0 100 200 300 400 500 10 20 30 40 50 60 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =667v d=50% r g =0.5 ? t j =125c t c =75c t j =25c t j =150c 1 10 100 1000 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage downloaded from: http:///
APTM100A13SG APTM100A13SG C rev 5 october, 2013 www.microsemi.com 7 C 7 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the ter ms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with li fe- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custo mers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclai ms any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, emp loyees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damag e or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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